Hybrid perovskite CHNHPbI has attracted extensive research interests in optoelectronic devices in recent years. Herein an inkjet printing method has been employed to deposit a perovskite CHNHPbI layer. By choosing the proper solvent and controlling the crystal growth rate, hybrid perovskite CHNHPbI nanowires, microwires, a network, and islands were synthesized by means of inkjet printing. Electrode-gap-electrode lateral-structured photodetectors were fabricated with these different crystals, of which a hybrid perovskite microwire-based photodetector would balance the uniformity and low defects to obtain a switching ratio of 16000%, responsivity of 1.2 A/W, and normalized detectivity of 2.39 × 10 Jones at a light power density of 0.1 mW/cm. Furthermore, the hybrid perovskite microwire-based photodetector arrays were fabricated and applied in an imaging sensor, from which the clear mapping of the light source signal was successfully obtained. This work paves the way for the realization of low-cost, solution-processed, and high-performance hybrid perovskite-based photodetector arrays.
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