A new strategy to discriminate four types of hazardous gases is proposed in this research. Through modulating the operating temperature and the processing response signal with a pattern recognition algorithm, a gas sensor consisting of a single sensing electrode, i.e., ZnO/In₂O₃ composite, is designed to differentiate NO₂, NH₃, C₃H₆, CO within the level of 50-400 ppm. Results indicate that with adding 15 wt.% ZnO to In₂O₃, the sensor fabricated at 900 °C shows optimal sensing characteristics in detecting all the studied gases. Moreover, with the aid of the principle component analysis (PCA) algorithm, the sensor operating in the temperature modulation mode demonstrates acceptable discrimination features. The satisfactory discrimination features disclose the future that it is possible to differentiate gas mixture efficiently through operating a single electrode sensor at temperature modulation mode.
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http://dx.doi.org/10.3390/s17030573 | DOI Listing |
Physiol Plant
January 2025
Centro de Ecología Integrativa (CEI), Universidad de Talca, Talca, Chile.
Antarctica has one of the most sensitive ecosystems to the negative effects of Persistent Organic Pollutants (POPs) on its biodiversity. This is because of the lower temperatures and the persistence of POPs that promote their accumulation or even biomagnification. However, the impact of POPs on vascular plants is unknown.
View Article and Find Full Text PDFNanoscale
January 2025
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583.
The widespread proliferation and increasing use of portable electronic devices and wearables, and the recent developments in artificial intelligence and internet-of-things, have fuelled the need for high-density and low-voltage non-volatile memory devices. Nanocrystal memory, an emergent non-volatile memory (NVM) device that makes use of the Coulomb blockade effect, can potentially result in the scaling of the tunnel dielectric layer to a very small thickness. Since the nanocrystals are electrically isolated, potential charge leakage paths localized defects in the thin tunnel dielectric can be substantially reduced, unlike that in a continuous polysilicon floating gate structure.
View Article and Find Full Text PDFACS Cent Sci
January 2025
Department of Chemistry, Merkert Chemistry Center, Boston College, Chestnut Hill, Massachusetts 02467, United States.
As a vital process for solar fuel synthesis, water oxidation remains a challenging reaction to perform using durable and cost-effective systems. Despite decades of intense research, our understanding of the detailed processes involved is still limited, particularly under photochemical conditions. Recent research has shown that the overall kinetics of water oxidation by a molecular dyad depends on the coordination between photocharge generation and the subsequent chemical steps.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China.
We have systematically studied the electromagnetic transport properties of PbTe thin films under gate voltage modulation. The system demonstrates pronounced electron-electron interactions exclusively within the gate voltage range where only hole carriers are present. Furthermore, the Berry phase is utilized to qualitatively elucidate the transition between weak antilocalization (WAL) and weak localization (WL) through the regulation of gate voltage and temperature.
View Article and Find Full Text PDFSmall
January 2025
Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450003, P. R. China.
The modulation of intrinsic magnetic properties of materials is of great importance for the exploration of new materials in the fields of information storage and spintronics. Herein, room-temperature ferromagnetic properties in BaZrO are successfully induced using supercritical CO. The highest saturation magnetization intensity of BaZrO is observed at 16 MPa, with a value of 0.
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