A monolayer MoS quantum dot confined polyimide (MQDs/PI) photocatalyst was synthesized by using a facile immersion-hydrothermal method. The investigations on the optical and electronic properties of MQDs/PI composites reveal that the strong quantum confinement effect of MQDs results in a blue-shift of the absorption band edge of PI, and the interfacial electronic interaction between MQDs and PI improves the charge transfer rate of MQDs/PI. The ultra-small size of 3.0 nm and perfect crystals of MQDs endow MQDs/PI composites with plenty of active sites and fast charge transfer, thus resulting in a 360% enhancement in photocatalytic hydrogen production compared with that of Pt/PI at the same loading amount of Pt. This discovery provides a new clue for the development of an efficient and sustainable non-noble metal photocatalyst.
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http://dx.doi.org/10.1039/c6dt04916h | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore.
The development of efficient sliding ferroelectric (FE) materials is crucial for advancing next-generation low-power nanodevices. Currently, most efforts focus on homobilayer two-dimensional materials, except for the experimentally reported heterobilayer sliding FE, MoS/WS. Here, we first screened 870 transition metal dichalcogenide (TMD) bilayer heterostructures derived from experimentally characterized monolayer TMDs and systematically investigated their sliding ferroelectric behavior across various stacking configurations using high-throughput calculations.
View Article and Find Full Text PDFNat Commun
January 2025
School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China.
Interlayer coupling in 2D heterostructures can result in a reduction of the rotation symmetry and the generation of quantum phenomena. Although these effects have been demonstrated in transition metal dichalcogenides (TMDs) with mismatched interfaces, the role of band hybridization remains unclear. In addition, the creation of flat bands at the valence band maximum (VBM) of TMDs is still an open challenge.
View Article and Find Full Text PDFACS Appl Energy Mater
January 2025
Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118-5636, United States.
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as MoS and WSe are excellent candidates for photovoltaic (PV) applications. Here, we present the modeling, fabrication, and characterization of large-area CVD-grown MoS-based flexible PV on an off-the-shelf, 3 μm-thick flexible colorless polyimide with polyimide encapsulation designed for space structures. The devices are characterized under 1 sun AM0 illumination and show a of 0.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
Dep. Fisica, Universidade Federal de Minas Gerais, ICEX, Av. Antonio Carlos 6627, Belo Horizonte, MG, 31270-901, BRAZIL.
Nowadays, experimental research advances in condensed matter physics are deep-rooted in the development and manipulation of nanomaterials, making it essential to explore the fundamental properties of materials that are candidates for nanotechnology. In this work, we study the dependence of the molybdenum disulfide (MoS2) Raman modes on the sample temperature and on the excitation laser power. From the correlation between these two sets of measurements, we determine the planar thermal conductivity of MoSmonolayers, bilayers, trilayers, four layers, seven layers, and eight layers.
View Article and Find Full Text PDFNano Lett
January 2025
Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
Two-dimensional (2D) semiconductors have attracted a considerable amount of interest as channel materials for future transistors. Patterning of 2D semiconductors is crucial for separating continuous monolayers into independent units. However, the state-of-the-art 2D patterning process is largely based on photolithography and high-energy plasma/RIE etching, leading to unavoidable residues and degraded device uniformity, which remains a critical challenge for the practical application of 2D electronics.
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