We report cross-plane thermoelectric measurements of misfit layered compounds (SnSe)(TiSe) (n = 1,3,4,5), approximately 50 nm thick. Metal resistance thermometers are fabricated on the top and bottom of the (SnSe)(TiSe) material to measure the temperature difference and heat transport through the material directly. By varying the number of layers in a supercell, n, we vary the interface density while maintaining a constant global stoichiometry. The Seebeck coefficient measured across the (SnSe)(TiSe) samples was found to depend strongly on the number of layers in the supercell (n). When n decreases from 5 to 1, the cross-plane Seebeck coefficient decreases from -31 to -2.5 μV/K, while the cross-plane effective thermal conductivity decreases by a factor of 2, due to increased interfacial phonon scattering. The cross-plane Seebeck coefficients of the (SnSe)(TiSe) are very different from the in-plane Seebeck coefficients, which are higher in magnitude and less sensitive to the number of layers in a supercell, n. We believe this difference is due to the different carrier types in the n-SnSe and p-TiSe layers and the effect of tunneling on the cross-plane transport.
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http://dx.doi.org/10.1021/acs.nanolett.6b05402 | DOI Listing |
Adv Mater
December 2024
Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, 560064, India.
Metal/semiconductor superlattices represent a fascinating frontier in materials science and nanotechnology, where alternating layers of metals and semiconductors are precisely engineered at the atomic and nano-scales. Traditionally, epitaxial metal/semiconductor superlattice growth requires constituent materials from the same family, exhibiting identical structural symmetry and low lattice mismatch. Here, beyond this conventional constraint, a novel class of epitaxial lattice-matched metal/semiconductor superlattices is introduced that utilizes refractory hexagonal elemental transition metals and wide-bandgap III-nitride semiconductors.
View Article and Find Full Text PDFMaterials (Basel)
July 2023
IM2NP, Department of Chemistry, CNRS, Aix-Marseille University, 13013 Marseille, France.
In recent years, layered chalcogenides have attracted interest for their appealing thermoelectric properties. We investigated the GeSbTe compound in two different stacking sequences, named stacking 1 (S1) and stacking 2 (S2), wherein the Ge and Sb atomic positions can be interchanged in the structure. The compound unit cell, comprising nine atoms, is made of two layers separated by a gap.
View Article and Find Full Text PDFChem Sci
May 2022
Department of Chemistry, Imperial College London, MSRH White City London W12 0BZ UK
The thermoelectric properties of parallel arrays of organic molecules on a surface offer the potential for large-area, flexible, solution processed, energy harvesting thin-films, whose room-temperature transport properties are controlled by quantum interference (QI). Recently, it has been demonstrated that constructive QI (CQI) can be translated from single molecules to self-assembled monolayers (SAMs), boosting both electrical conductivities and Seebeck coefficients. However, these CQI-enhanced systems are limited by rigid coupling of the component molecules to metallic electrodes, preventing the introduction of additional layers which would be advantageous for their further development.
View Article and Find Full Text PDFChem Sci
July 2020
Physics Department , Lancaster University, Lancaster , LA1 4YB , UK . Email: ; Email:
It is known that the electrical conductance of single molecules can be controlled in a deterministic manner by chemically varying their anchor groups to external electrodes. Here, by employing synthetic methodologies to vary the terminal anchor groups around aromatic anthracene cores, and by forming self-assembled monolayers (SAMs) of the resulting molecules, we demonstrate that this method of control can be translated into cross-plane SAM-on-gold molecular films. The cross-plane conductance of SAMs formed from anthracene-based molecules with four different combinations of anchors are measured to differ by a factor of approximately 3 in agreement with theoretical predictions.
View Article and Find Full Text PDFACS Appl Mater Interfaces
June 2020
Catalonia Energy Research Institute-IREC, Sant Adrià de Besòs, Barcelona, Catalonia 08930, Spain.
In the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can be continuously decomposed to produce a SnSe powder or printed into predefined patterns. The precursor formulation and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates.
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