We investigate corrections on the cooling limit of high-order Lamb-Dicke (LD) parameters in the double electromagnetically induced transparency (EIT) cooling scheme. Via utilizing quantum interferences, the single-phonon heating mechanism vanishes and the system evolves to a double dark state, from which we will obtain the mechanical occupation on the single-phonon excitation state. In addition, the further correction induced by two-phonon heating transitions is included to achieve a more accurate cooling limit. There exist two pathways of two-phonon heating transitions: direct two-phonon excitation from the dark state and further excitation from the single-phonon excited state. By adding up these two parts of correction, the obtained analytical predictions show a well consistence with numerical results. Moreover, we find that the two pathways can destructively interfere with each other, leading to the elimination of two-phonon heating transitions and achieving a lower cooling limit.
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http://dx.doi.org/10.1364/OE.25.001314 | DOI Listing |
J Clin Med
January 2025
Department of Anesthesiology and Pain Medicine, Anam Hospital, Korea University College of Medicine, Seoul 02841, Republic of Korea.
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January 2025
Innovation in Research & Engineering Solutions (IRES), 1000 Brussels, Belgium.
In modern manufacturing environments, pollution management is critical as exposure to harmful substances can cause serious health issues. This study presents a two-stage computational fluid dynamic (CFD) model to estimate the distribution of pollutants in indoor production spaces. In the first stage, the Reynolds-averaged Navier-Stokes (RANS) method was used to simulate airflow and temperature.
View Article and Find Full Text PDFChildren (Basel)
December 2024
Department of Neonatology, Khoula Hospital, Mina Al Fahal, Muscat 116, Oman.
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Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, New York 14853, USA.
As the demand for high-power-density microelectronics rises, overheating becomes the bottleneck that limits device performance. In particular, the heterogeneous integration architecture can magnify the importance of heat dissipation and necessitate electrical insulation between critical junctions to prevent dielectric breakdown. Consequently, there is an urgent need for thermal interface materials (TIMs) with high thermal conductivity and electrical insulation to address this challenge.
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