Solution-processable organometal perovskite materials have been widely used in various kinds of devices. In these devices, the perovskite materials normally act as active layers. Grain boundaries and structural disorder in the perovskite layer would interfere the charge transport and increase recombination probability. Here we proposed a novel fabrication method to dramatically increase the crystal size by more than 20 times as compared with previously reported values. Exceptional structural order in the large crystals is illustrated by nanoscale surface morphology and a simple recrystallization method. Because of reduced grain boundaries and increased crystal order in perovskite layers, the lateral charge transport is significantly improved, as demonstrated by conductive atomic-force microscopy and performance of photodetectors. This deposition technology paves the way for future high-performance devices based on perovskite thin films.
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