Organic bistable memory devices based on MoO nanoparticle embedded Alq structures.

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO) between two tris-(8-hydroxyquinoline)aluminum (Alq) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 10 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO layer thickness and its location in the Alq matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.