Two-dimensional (2D) materials offer a promising platform for exploring condensed matter phenomena and developing technological applications. However, the reduction of material dimensions to the atomic scale poses a challenge for traditional measurement and interfacing techniques that typically couple to macroscopic observables. We demonstrate a method for probing the properties of 2D materials via nanometer-scale nuclear quadrupole resonance (NQR) spectroscopy using individual atomlike impurities in diamond. Coherent manipulation of shallow nitrogen-vacancy (NV) color centers enables the probing of nanoscale ensembles down to approximately 30 nuclear spins in atomically thin hexagonal boron nitride (h-BN). The characterization of low-dimensional nanoscale materials could enable the development of new quantum hybrid systems, combining atomlike systems coherently coupled with individual atoms in 2D materials.
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http://dx.doi.org/10.1126/science.aal2538 | DOI Listing |
J Phys Chem Lett
January 2025
Clausius Institut für Physikalische und Theoretische Chemie, Universität Bonn, Bonn 53115, Germany.
The carpet growth of alkali halide (AH) layers across step edges of substrates enables the growth of seamless and continuous large domains. Yet, information about how the AH layer adapts continuously to the height difference between the terraces on the two sides of a step is only described by continuum models, which do not give details of the ionic displacements. Here, we present a first study of thin epitaxial KCl(100) layers grown on the Ag(111) surface by scanning tunneling microscopy that provides atomistic details for the first time.
View Article and Find Full Text PDFSmall
January 2025
Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, China.
Single-atom materials provide a platform to precisely regulate the electrochemical redox behavior of electrode materials with atomic level. Here, a multifield-regulated sintering route is reported to rapidly prepare single-atom zinc with a very high loading mass of 24.7 wt.
View Article and Find Full Text PDFLight Sci Appl
January 2025
Department of Physics, University of Ottawa, Ottawa, ON, K1N 6N5, Canada.
Graphene has unique properties paving the way for groundbreaking future applications. Its large optical nonlinearity and ease of integration in devices notably makes it an ideal candidate to become a key component for all-optical switching and frequency conversion applications. In the terahertz (THz) region, various approaches have been independently demonstrated to optimize the nonlinear effects in graphene, addressing a critical limitation arising from the atomically thin interaction length.
View Article and Find Full Text PDFBiomed Mater
January 2025
Dagestan State Medical University of the Ministry of Health of the Russian Federation, Makhachkala, Mahackala, Dagestan, 367000, RUSSIAN FEDERATION.
Suture-associated surgical site infection (SSI) causes bacterial pathogens to colonize on the suture surface that are highly resistant to antibiotic treatment. Conventional suture materials used in surgical practice are causing complications such as infection and chronic inflammation. Surgical suture materials with antibacterial coatings are widely used in surgical practice.
View Article and Find Full Text PDFACS Nano
January 2025
BK21 Graduate Program in Intelligent Semiconductor Technology, Seoul 03722, Republic of Korea.
MoS, one of the most researched two-dimensional semiconductor materials, has great potential as the channel material in dynamic random-access memory (DRAM) due to the low leakage current inherited from the atomically thin thickness, high band gap, and heavy effective mass. In this work, we fabricate one-transistor-one-capacitor (1T1C) DRAM using chemical vapor deposition (CVD)-grown monolayer (ML) MoS in large area and confirm the ultralow leakage current of approximately 10 A/μm, significantly lower than the previous report (10 A/μm) in two-transistor-zero-capacitor (2T0C) DRAM based on a few-layer MoS flake. Through rigorous analysis of leakage current considering thermionic emission, tunneling at the source/drain, Shockley-Read-Hall recombination, and trap-assisted tunneling (TAT) current, the TAT current is identified as the primary source of leakage current.
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