Reactive multilayer films (RMFs) can be integrated into semiconducting electronic structures with the use of microelectromechanical systems (MEMS) technology and represent potential applications in the advancement of microscale energy-demanding systems. In this study, aluminum/molybdenum trioxide (Al/MoO)-based RMFs with different modulation periods were integrated on a semiconductor bridge (SCB) using a combination of an image reversal lift-off process and magnetron sputtering technology. This produced an energetic semiconductor bridge (ESCB)-chip initiator with controlled ignition performance. The effects of the Al/MoO RMFs with different modulation periods on ignition properties of the ESCB initiator were then systematically investigated in terms of flame duration, maximum flame area, and the reaction ratio of the RMFs. These microchip initiators achieved flame durations of 60-600 μs, maximum flame areas of 2.85-17.61 mm, and reaction ratios of ∼14-100% (discharged with 47 μF/30 V) by simply changing the modulation periods of the Al/MoO RMFs. This behavior was also consistent with a one-dimensional diffusion reaction model. The microchip initiator exhibited a high level of integration and proved to have tuned ignition performance, which can potentially be used in civilian and military applications.
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