AI Article Synopsis
- Two-dimensional chalcogenide monolayers, like monolayer WS, show potential for flexible, transparent optoelectronics but typically have low responsivity due to their thin structure.
- A new method has been developed to enhance the performance of hybrid phototransistors by incorporating SnS nanosheets, resulting in a significant increase in responsivity to about 2 A/W and a much higher signal-to-noise ratio of 10.
- Additionally, these hybrid photodetectors demonstrate quick response times and can detect light in the near-infrared region after surface modification.
Article Abstract
Two-dimensional chalcogenide monolayers are strong candidates for next-generation flexible and transparent optoelectronics. Due to the intrinsic ultrathin thickness and limited optical absorption, however, their responsivity is normally low. Here we develop a simple and low-cost method to fabricate high-performance hybrid phototransistors of monolayer WS with significantly enhanced responsivity and an extended spectral response range, by virtue of surface decoration with liquid-phase exfoliated SnS nanosheets (NSs). The hybrid phototransistors show a much enhanced responsivity of ∼2 A W and an ultrahigh light/dark signal-to-noise ratio of 10 under 457 nm excitation, exhibiting a significant increase of 3 orders of magnitude in responsivity and a 100 fold increase in signal-to-noise ratio, compared with pure WS devices. Our hybrid photodetectors also exhibit a respectable response speed, with a rise and decay time of 51 μs and 98 μs, respectively. After optimal surface decoration with narrow bandgap SnS NSs atop a monolayer WS channel, an emergent optical responsivity in the near infrared region (1064 nm) is also observed.
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| http://dx.doi.org/10.1039/c6nr08610a | DOI Listing |
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