AI Article Synopsis
- * The annealing process helps to crystallize the black silicon, which contributes to the observed improvements in emission properties.
- * Emission characteristics are more intense and broader when black silicon is prepared in an oxygen atmosphere compared to a vacuum, due to specific electronic states related to defects that are enhanced at room temperature.
Article Abstract
It is found that the optimum annealing temperature is about 1000°C for the infrared emission of defect states at room temperature on black silicon (BS) prepared by using a nanosecond-pulsed laser. In addition, it is observed that the suitable annealing time is 6∼8 min at 1000°C for the emission on the BS. The crystallizing proceeding in annealing on the BS can be used to explain the above annealing effect. It is interesting that the emission band becomes intensive and broader on the BS prepared in oxygen atmosphere than that prepared in vacuum in the analysis of photoluminescence spectra, where the electronic states localized at the defects from D1 to D4 doped with oxygen play an important role in the emission with the broader band which are obviously enhanced in the room temperature.
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| http://dx.doi.org/10.1364/OL.42.000358 | DOI Listing |
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