HfSe field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe field effect transistors showed a high on/off ratio improvement of four orders of magnitude, from 27 to 10, a field effect mobility increase from 2.16 to 3.04 cm V s, a subthreshold swing improvement from 30.6 to 4.8 V dec, and a positive threshold voltage shift between depletion mode and enhancement mode, from -7.02 to 11.5 V. The plasma-treated HfSe photodetector also demonstrates a reasonable photoresponsivity from the visible to the near-infrared region of light.
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