Agriculture is a major source of nitrous oxide (NO) emissions, a potent greenhouse gas. While direct NO emissions from soils have been widely investigated, indirect NO emissions from nitrogen (N) enriched surface water and groundwater bodies are poorly understood. In this contribution, indirect NO emissions from subsurface agricultural field drains and headwater streams were monitored over a two-year period (2013-2015) in an intensive arable catchment in eastern England. Indirect NO emission factors for groundwater (EF) and surface runoff (EF) were calculated for both field drain and streamwater samples, respectively, using two approaches: the NO-N/NO-N ratio and the IPCC (2006) methodology. Mean EF values derived from the NO-N/NO-N ratio were 0.0012 for field drains and 0.0003 for streamwater. Using the IPCC (2006) methodology, the mean EF values were 0.0011 for field drains and 0.0001 for streamwater. Thus, EF values derived from both methods were below the current IPCC (2006) default value of 0.0025 and a downward revision to 0.0012 for EF and 0.0002 for EF is recommended. Such revision would halve current estimates of NO emissions associated with nitrogen leaching and runoff from agriculture for both the UK and globally.
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http://dx.doi.org/10.1021/acs.est.6b05094 | DOI Listing |
Nat Commun
January 2025
School of Electronics Science and Engineering/National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, China.
Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short channel is desirable to enhance driving current. Typically, the patterning of such delicate channels relies on high-precision lithography, which is not applicable for large area electronics. In this work, we demonstrate that ultrathin and short silicon nanowires channels can be created through a local-curvature-modulated catalytic growth, where a planar silicon nanowires is directed to jump over a crossing step.
View Article and Find Full Text PDFNat Commun
January 2025
State Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.
Two-dimensional (2D) materials have been identified as promising candidates for future electronic devices. However, high dielectric constant (κ) materials, which can be integrated with 2D semiconductors, are still rare. Here, we report a hydrate-assisted thinning chemical vapor deposition (CVD) technique to grow manganese oxide (MnO) single crystal nanosheets, enabled by a strategy to minimize the substrate lattice mismatch and control the growth kinetics.
View Article and Find Full Text PDFEnviron Res
January 2025
Hydrology and Environmental Hydraulics Group, Wageningen University, Wageningen, Netherlands.
Concentrations of microplastics are both temporally and spatially variable in streamflow. Yet, an overwhelming number of published field studies do not target a range of flow conditions and fail to adequately capture particle transport within the full flow field. Since microplastic flux models rely on the representativeness of available data, current predictions of riverine exports contain substantial error.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Electrical Engineering and Computer Science (EECS), Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.
A transistor design employing all vertically stacked components has attracted considerable attention due to the simplicity of the fabrication process and the high conductivity easily realized by achieving nanolevel short channel lengths with two-dimensional current paths. However, fundamental issues, specifically the blocking of the gate electrical field to the semiconductive channel layer and high leakage current at the "off" state, have impeded this configuration in becoming a major transistor design. To address these issues, it has been proposed to introduce a blocking layer (BL) with embedded hole structures and source electrode with embedded hole structures, enhancing gate field penetration and carrier modulation.
View Article and Find Full Text PDFFront Neurosci
January 2025
Functional Magnetic Resonance Imaging (FMRI) Core, NIH, National Institute of Mental Health, Bethesda, MD, United States.
The use of submillimeter resolution functional magnetic resonance imaging (fMRI) is increasing in popularity due to the prospect of studying human brain activation non-invasively at the scale of cortical layers and columns. This method, known as laminar fMRI, is inherently signal-to-noise ratio (SNR)-limited, especially at lower field strengths, with the dominant noise source being of thermal origin. Furthermore, laminar fMRI is challenged with signal displacements due to draining vein effects in conventional gradient-echo blood oxygen level-dependent (BOLD) imaging contrasts.
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