We demonstrate an ultra-compact and low-threshold thulium microcavity laser that is monolithically integrated on a silicon chip. The integrated microlaser consists of an active thulium-doped aluminum oxide microcavity beside a passive silicon nitride bus waveguide, which enables on-chip pump-input and laser-output coupling. We observe lasing in the wavelength range of 1.8-1.9 μm under 1.6 μm resonant pumping and at varying waveguide-microcavity gap sizes. The microlaser exhibits a threshold as low as 773 μW (226 μW) and a slope efficiency as high as 24% (48%) with respect to the pump power coupled into the silicon nitride bus waveguide (microcavity). Its small footprint, minimal energy consumption, high efficiency, and silicon compatibility demonstrate that on-chip thulium lasers are promising light sources for silicon microphotonic systems.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OL.41.005708 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Microring cavities based on whispering-gallery modes (WGMs) have a very high-quality factor (Q) and a small mode volume, greatly improving the interaction between light and matter, which has attracted great attention in microlaser, nonlinear, and sensing fields. Plasmonics in the microcavity further enhance compression of the optical field. Recently, research on enhanced optical sensing sensitivity and low threshold laser based on exceptional points (EPs) is quite impressive.
View Article and Find Full Text PDFLow-Threshold and High-Extinction-Ratio Optical Bistability within a Graphene-Based Perfect Absorber.
Nanomaterials (Basel)
January 2023
College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.
A kind of graphene-based perfect absorber which can generate low-threshold and high-extinction-ratio optical bistability in the near-IR band is proposed and simulated with numerical methods. The interaction between input light and monolayer graphene in the absorber can be greatly enhanced due to the perfect absorption. The large nonlinear coefficient of graphene and the strong light-graphene interaction contribute to the nonlinear response of the structure, leading to relatively low switching thresholds of less than 2.
View Article and Find Full Text PDFA Low-Threshold Miniaturized Plasmonic Nanowire Laser with High-Reflectivity Metal Mirrors.
Nanomaterials (Basel)
September 2020
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
A reflectivity-enhanced hybrid plasmonic GaAs/AlGaAs core-shell nanowire laser is proposed and studied by 3D finite-difference time-domain simulations. The results demonstrate that by introducing thin metal mirrors at both ends, the end facet reflectivity of nanowire is increased by 30-140%, resulting in a much stronger optical feedback. Due to the enhanced interaction between the surface charge oscillation and light, the electric field intensity inside the dielectric gap layer increases, resulting in a much lower threshold gain.
View Article and Find Full Text PDFContinuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001).
Nat Commun
February 2020
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.
Semiconductor III-V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots.
View Article and Find Full Text PDFType-I hyperbolic metasurfaces for highly-squeezed designer polaritons with negative group velocity.
Nat Commun
May 2019
State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
Hyperbolic polaritons in van der Waals materials and metamaterial heterostructures provide unprecedented control over light-matter interaction at extreme nanoscales. Here we propose a concept of type-I hyperbolic metasurface supporting highly-squeezed magnetic designer polaritons, which act as magnetic analogs of hyperbolic polaritons in the hexagonal boron nitride (h-BN) in the first Reststrahlen band. Compared with the natural h-BN, the size and spacing of the metasurface unit cell can be readily engineered, allowing for manipulating designer polaritons in frequency and space with greater flexibility.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!