We developed Schottky junction photovoltaic cells based on multilayer MoWSe with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. MoWSe Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe and WSe devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in MoWSe devices. Furthermore, we showed that MoWSe-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.
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http://dx.doi.org/10.1021/acsami.6b11768 | DOI Listing |
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