A novel approach for multiphysics modeling of bulk acoustic wave (BAW) filters is presented allowing accurate and at the same time efficient modeling of BAW filters at high power levels. The approach takes the different types of losses and their spatial distribution into account in order to provide the required input for thermal simulation. The temperature distribution determined by thermal simulation is used to modify the geometry and the layer stack of each single resonator of the filter. In this way, the required input for modeling of electromagnetic (EM) and acoustic behavior at high power level is generated. The high accuracy of the modeling approach is verified by the measurements of the S-parameters and the temperature distribution by infrared thermography during high-power loads. Moreover, the influence of the nonlinear behavior on the frequency shift of the resonance frequency is investigated. For this purpose, a parameterized nonlinear Mason model has been combined with a 3-D EM finite-element method and the required nonlinear material parameters were determined by fitting simulation results to the measured polyharmonic distortion model (X-parameters) of a BAW resonator.
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http://dx.doi.org/10.1109/TUFFC.2016.2615109 | DOI Listing |
Microsyst Nanoeng
January 2025
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high-frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling ( ) to form filters with low insertion loss and high selectivity. However, both the Q and of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz.
View Article and Find Full Text PDFMicromachines (Basel)
October 2024
The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, School of Microelectronics, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
ACS Appl Mater Interfaces
October 2024
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, P. R. China.
The presence of abnormally oriented grains (AOGs) in sputter-deposited aluminum scandium nitride (AlScN) films significantly degrades their physical properties, compromising the performance of bulk acoustic wave (BAW) devices. This study utilizes first-principles calculations to reveal that in tetrahedral wurtzite AlScN film-doped Sc atoms tend to aggregate at the second nearest-neighbor positions, forming dense ScN octahedral structures. The rock-salt (RS) ScN continued to grow due to further Sc aggregation.
View Article and Find Full Text PDFEnviron Sci Pollut Res Int
July 2024
Institute for Land and Water Management Research, Federal Agency for Water Management, Pollnbergstraße 1, 3252, Petzenkirchen, Austria.
Soil erosion from agricultural fields is a persistent ecological problem, potentially leading to eutrophication of aquatic habitats in the catchment area. Often used and recommended mitigation measures are vegetated filter strips (VFS) as buffer zones between arable land and water bodies. However, if they are designed and managed poorly, nutrients - especially phosphorus (P) - may accumulate in the soil.
View Article and Find Full Text PDFNanotechnology
February 2024
Annealsys, Montpellier, France.
Development of bulk acoustic wave filters with ultra-wide pass bands and operating at high frequencies for 5and 6generation telecommunication applications and micro-scale actuators, energy harvesters and sensors requires lead-free piezoelectric thin films with high electromechanical coupling and compatible with Si technology. In this paper, the epitaxial growth of 36°Y-X and 30°X-Y LiNbOfilms by direct liquid injection chemical vapour deposition on Si substrates by using epitaxial SrTiOlayers, grown by molecular beam epitaxy, has been demonstrated. The stability of the interfaces and chemical interactions between SrTiO, LiNbOand Si were studied experimentally and by thermodynamical calculations.
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