Fabrication of WS/GaN p-n Junction by Wafer-Scale WS Thin Film Transfer.

Sci Rep

Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hong Kong, China.

Published: November 2016

High quality wafer-scale free-standing WS grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS, which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm at -1 V which shows superior performances compared to the directly grown WS/GaN heterojunctions.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5126671PMC
http://dx.doi.org/10.1038/srep37833DOI Listing

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