AI Article Synopsis
- High electron mobility is a crucial property of graphene, especially in its heterostructures with hexagonal boron nitride, widely used in research and applications.
- Despite the common assumption that the electronic states in these layered systems do not couple significantly, this study reveals that graphene and boron nitride bands show no interaction across a broad energy range.
- The angle-resolved reflected-electron spectroscopy method we utilized can be applied to investigate interactions in other van der Waals layered materials, enhancing our understanding of how electronic coupling contributes to the creation of novel materials.
Article Abstract
High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5141287 | PMC |
| http://dx.doi.org/10.1038/ncomms13621 | DOI Listing |
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