Three-dimensional (3D) Dirac semimetals are featured by 3D linear energy-momentum dispersion relation, which have been proposed to be a desirable system to study Dirac fermions in 3D space and Weyl fermions in solid-state materials. Significantly, to reveal exotic transport properties of Dirac semimetals, the Fermi level should be close to the Dirac point, around which the linear dispersion is retained. Here we report the magnetotransport properties near the Dirac point in CdAs nanowires, manifesting the evolution of band structure under magnetic field. Ambipolar field effect is observed with the Dirac point at V = 3.9 V. Under high magnetic field, there is a resistivity dip in transfer curve at the Dirac point, which is caused by the Zeeman splitting enhanced density of state around the Dirac point. Furthermore, the low carrier density in the nanowires makes it feasible to enter into the quantum limit regime, resulting in the quantum linear magnetoresistance being observed even at room temperature. Besides, the dramatic reduction of bulk conductivity due to the low carrier density, together with a large surface to volume ratio of the nanowire, collectively help to reveal the Shubnikov-de Haas oscillations from the surface states. Our studies on transport properties around the Dirac point therefore provide deep insights into the emerging exotic physics of Dirac and Weyl fermions.
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http://dx.doi.org/10.1088/1361-648X/29/4/044003 | DOI Listing |
Quantum materials governed by emergent topological fermions have become a cornerstone of physics. Dirac fermions in graphene form the basis for moiré quantum matter and Dirac fermions in magnetic topological insulators enabled the discovery of the quantum anomalous Hall (QAH) effect. By contrast, there are few materials whose electromagnetic response is dominated by emergent Weyl fermions.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
Theoretical Science, Poornaprajna Institute of Scientific Research, Ranjith Kumar R, Department of Physics, Indian Institute of Technoloby Bombay, Mumbai, 400076, INDIA.
Understanding the critical properties is essential for determining the physical behavior of topological systems. In this context, scaling theories based on the curvature function in momentum space, the renormalization group (RG) method, and the universality of critical exponents have proven effective. In this work, we develop a scaling theory for non-Hermitian topological states of matter.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan.
Graphene-based supercapacitors have gained significant attention due to their exceptional energy storage capabilities. Despite numerous research efforts trying to improve the performance, the challenge of experimentally elucidating the nanoscale-interface molecular characteristics still needs to be tackled for device optimizations in commercial applications. To address this, we have conducted a series of experiments using substrate-free graphene field-effect transistors (SF-GFETs) and oxide-supported graphene field-effect transistors (OS-GFETs) to elucidate the graphene-electrolyte interfacial arrangement and corresponding capacitance under different surface potential states and ionic concentration environments.
View Article and Find Full Text PDFSci Rep
January 2025
Saint Petersburg State University, St. Petersburg, 198504, Russia.
Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) [Formula: see text] have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10% to 75%. It was shown that when Ge concentration increases, the bulk band gap decreases and reaches zero plateau in the concentration range of 45-60% while trivial surface states (TrSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40%.
View Article and Find Full Text PDFAdv Mater
January 2025
CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.
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