We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature =1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with =1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below with effective hole-carrier concentration higher than 10 cm. We interpret the different superconducting behavior in carrier-doped -type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5099635 | PMC |
| http://dx.doi.org/10.1088/1468-6996/9/4/044204 | DOI Listing |
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