Porous germanium films with good adhesion to the substrate were produced by annealing GeO ceramic films in H atmosphere. The reduction of GeO started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (10 cm) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.
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| http://dx.doi.org/10.1088/1468-6996/10/6/065001 | DOI Listing |
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