AI Article Synopsis
- A CMOS Buried Double Junction PN (BDJ) photodetector is made up of two stacked photodiodes and is known for its enhanced performance and wavelength sensitivity.
- The paper reviews the device's operation, including critical factors like surface reflection, photon absorption, and current generation.
- It also discusses modeling, design improvements for better performance, and highlights various applications of BDJ-based image sensors.
Article Abstract
A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3707468 | PMC |
| http://dx.doi.org/10.3390/s8106566 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!