Monolayer molybdenum disulfide (MoS), consisting of covalently bonded S-Mo-S sandwiched layers, has high carrier mobility and a direct bandgap of 1.8 eV, offering properties for electronic and optoelectronic devices with high performance. Usually, it is essential to modulate the carrier concentrations and conductivities of monolayer MoS for practical applications. In this paper, black phosphorus (BP) quantum dots (QDs) were synthesized by a liquid exfoliation method successfully, and have a diameter of ∼5 nm as confirmed with a transmission electron microscope (TEM). BP QDs were utilized to decorate monolayer MoS grown by chemical vapor deposition (CVD). The Raman and PL spectra of the BP QD/MoS hybrid structure clearly indicate that BP QDs are an effective n-type doping scheme for monolayer MoS. Back-gated monolayer MoS transistors were fabricated and show an improved source-drain current after BP QD modifications. A high electron concentration of ∼5.39 × 10 cm in monolayer MoS was achieved, which is beneficial for designing FETs and photodetector devices with novel functions.
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