Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS. Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.
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| http://dx.doi.org/10.1038/ncomms13372 | DOI Listing |
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