We demonstrate electro-optical tuning of degenerate band edge resonances in Si photonic waveguides for applications including tunable filters, low voltage switches, and modulators. Carrier injection modulation is enabled by introducing periodic Si slabs to electrically connect the resonator to P and N dopants. Measured devices yield a large DC tunability of 7.1 nm/V and a peak switching slope of 206 dB/V. Digital data transmission measurements at 100 Mb/s show 3 dB of switching with a swing voltage of 6.8 mV, 91.4 aJ/bit switching energy, and 1.08 pJ/bit holding energy.

Download full-text PDF

Source
http://dx.doi.org/10.1364/OE.24.023481DOI Listing

Publication Analysis

Top Keywords

carrier injection
8
degenerate band
8
band edge
8
nm/v tunability
4
tunability millivolt
4
millivolt scale
4
switching
4
scale switching
4
switching silicon
4
silicon carrier
4

Similar Publications

: The proton-coupled amino acid transporter (PAT1) is an intestinal absorptive solute carrier responsible for the oral bioavailability of some GABA-mimetic drug substances such as vigabatrin and gaboxadol. In the present work, we investigate if non-steroidal anti-inflammatory drug substances (NSAIDs) interact with substrate transport via human (h)PAT1. : The transport of substrates via hPAT1 was investigated in Caco-2 cells using radiolabeled substrate uptake and in oocytes injected with , measuring induced currents using the two-electrode voltage clamp technique.

View Article and Find Full Text PDF

Poly(amic acid)-Polyimide Copolymer Interfacial Layers for Self-Powered CHNHPbI Photovoltaic Photodiodes.

Polymers (Basel)

January 2025

Department of Electrical and Biological Physics, Kwangwoon University, Wolgye-Dong, Seoul 01897, Republic of Korea.

Hybrid organohalide perovskites have received considerable attention due to their exceptional photovoltaic (PV) conversion efficiencies in optoelectronic devices. In this study, we report the development of a highly sensitive, self-powered perovskite-based photovoltaic photodiode (PVPD) fabricated by incorporating a poly(amic acid)-polyimide (PAA-PI) copolymer as an interfacial layer between a methylammonium lead iodide (CHNHPbI, MAPbI) perovskite light-absorbing layer and a poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT: PSS) hole injection layer. The PAA-PI interfacial layer effectively suppresses carrier recombination at the interfaces, resulting in a high power conversion efficiency () of 11.

View Article and Find Full Text PDF

Hemoglobin-based oxygen carriers have been developed to compensate the needs of blood for transfusions. Most of them were based on intracellular hemoglobin extracted from bovine or human blood, but unfortunately, this type of hemoglobin did not pass through the last steps of clinical trials. In this context, HEMARINA discovered a natural extracellular hemoglobin, possessing several advantages avoiding intracellular hemoglobin-related side effects.

View Article and Find Full Text PDF

Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction.

Micromachines (Basel)

December 2024

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.

In this study, we aim to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) by using the short-period AlGaN/GaN superlattice as a tunnel junction (TJ) to construct polarized structures. We analyze in detail the effect of this polarized TJ on the carrier injection efficiency and investigate the increase in hole and electron density caused by the formation of 2D hole gas (2DHG) and 2D electron gas (2DEG) in the superlattice structure. In addition, a dielectric layer is introduced to evaluate the effect of stress changes on the tunneling probability and current spread in TJ.

View Article and Find Full Text PDF

The failure of different chips under working conditions is influenced by various stress states such as different voltages, temperatures, stress durations, and stress variations. Therefore, the failure time has a great degree of dispersion, and similar chips may exhibit different failure mechanisms due to variations in their working environments. This paper proposes three system-on-chip reliability failure prediction unit circuits: the time-dependent dielectric breakdown prediction circuit, the negative bias temperature instability prediction circuit, and the hot carrier injection prediction circuit.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!