Near-ultraviolet lateral photovoltaic effect in FeO/3C-SiC Schottky junctions.

In this paper, we report a sensitive lateral photovoltaic effect (LPE) in FeO/3C-SiC Schottky junctions with a fast relaxation time at near-ultraviolet wavelengths. The rectifying behavior suggests that the large build-in electric field was formed in the Schottky junctions. This device has excellent position sensitivity as high as 67.8 mV mm illuminated by a 405 nm laser. The optical relaxation time of the LPE is about 30 μs. The fast relaxation and high positional sensitivity of the LPE make the FeO/3C-SiC junction a promising candidate for a wide range of ultraviolet/near-ultraviolet optoelectronic applications.