Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability.

Sci Rep

Research Branch of Advanced Functional Materials, School of Microelectronics and Solid-State Electronics, High Temperature Resistant Polymer and Composites Key Laboratory of Sichuan Province, University of Electronic Science and Technology of China, Chengdu, 610054, China.

Published: November 2016

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (T) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100-200 kHz and in the temperature range of 25-300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101497PMC
http://dx.doi.org/10.1038/srep36434DOI Listing

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