Since 2003, terbium(iii) bis-phthalocyaninato complexes have been recognised as acting as single molecule magnets (SMMs), propitiating multiple studies with the aim of better understanding the single metal-ion based magnetism with unusually high blocking temperatures. In the quest for novel applications, it became clear that if spintronic devices were made from SMM molecules, their confinement in the proximity of surfaces or electrodes would become difficult to circumvent. In this perspective article, we highlight the influence of the presence of different substrates on the magnetic performance of TbPc-SMMs, in principle caused by, among other effects, electronic hybridization, dipole-dipole coupling and changing quantum tunnelling (QT) rates on the surface. We show that the improved comprehension of how SMMs interact and communicate with the environment finally leads to magnetic remanence and lower tunnelling rates, paving the way to novel classes of spintronic devices.
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http://dx.doi.org/10.1039/c6dt03298b | DOI Listing |
ACS Appl Mater Interfaces
January 2025
School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India.
Materials exhibiting topological transport properties, such as a large topological Hall resistivity, are crucial for next-generation spintronic devices. Here, we report large topological Hall resistivities in epitaxial supermalloy (NiFeMo) thin films with [100] and [111] orientations grown on single-crystal MgO (100) and AlO (0001) substrates, respectively. While X-ray reciprocal maps confirmed the epitaxial growth of the films, X-ray stress analyses revealed large residual strains in the films, inducing tetragonal distortions of the cubic NiFeMo unit cells.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27606, USA.
The present work investigates the interfacial and atomic layer-dependent mechanical properties, SOC-entailing phonon band structure, and comprehensive electron-topological-elastic integration of ZrTe and NiTe. The anisotropy of Young's modulus, Poisson's ratio, and shear modulus are analyzed using density functional theory with the TB-mBJ approximation. NiTe has higher mechanical property values and greater anisotropy than ZrTe.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Department of Mechanical Engineering, Hong Kong Polytechnic University, Hong Kong 999077, China.
Ferroelectric materials hold immense potential for diverse applications in sensors, actuators, memory storage, and microelectronics. The discovery of two-dimensional (2D) ferroelectrics, particularly ultrathin compounds with stable crystal structure and room-temperature ferroelectricity, has led to significant advancements in the field. However, challenges such as depolarization effects, low Curie temperature, and high energy barriers for polarization reversal remain in the development of 2D ferroelectrics with high performance.
View Article and Find Full Text PDFMater Horiz
January 2025
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
The quantum anomalous Hall effect (QAHE) with a high Chern number hosts multiple dissipationless chiral edge channels, which is of fundamental interest and promising for applications in spintronics. However, QAHE is currently limited in two-dimensional (2D) ferromagnets with Chern number . Using a tight-binding model, we put forward that Floquet engineering offers a strategy to achieve QAHE in 2D nonmagnets, and, in contrast to generally reported QAHE in 2D ferromagnets, a high-Chern-number is obtained accompanied by the emergence of two chiral edge states.
View Article and Find Full Text PDFRSC Adv
January 2025
School of Electronic Information, Huzhou College Huzhou 313000 China
Two-dimensional (2D) ferromagnetic (FM) semiconductors hold great promise for the next generation spintronics devices. By performing density functional theory first-principles calculations, both CeF and CeFCl monolayers are studied, our calculation results show that CeF is a FM semiconductor with sizable magneto-crystalline anisotropy energy (MAE) and high Curie temperature (290 K), but a smaller band gap and thermal instability indicate that it is not applicable at higher temperature. Its isoelectronic analogue, the CeFCl monolayer, is a bipolar FM semiconductor, its dynamics, elastic, and thermal stability are confirmed, our results demonstrate promising applications of the CeFCl monolayer for next-generation spintronic devices owing to its high Curie temperature (200 K), stable semiconducting features, and stability.
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