is suggested as an effective strategy to enhance the figure of merit of heavy-band thermoelectric materials. Heavy-band FeNbSb half-Heusler system with intrinsically low carrier mean free path is demonstrated as a paradigm. An enhanced of 1.34 is obtained at 1150 K for the FeNbTiSb compound with intentionally designed hierarchical scattering centers.
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| http://dx.doi.org/10.1002/advs.201600035 | DOI Listing |
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