For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top CoFeB free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t ): it peaked (∼134%) at a specific t (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the CoFeB pinned layer when t increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t increased from 3.3-14.3 nm.
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