AI Article Synopsis

  • The study explores tunneling through a ferromagnetic barrier on a three-dimensional topological insulator, highlighting the impact of magnetization along the bias direction.
  • The presence of a tunneling planar Hall conductance (TPHC) allows for a significantly large Hall angle, where TPHC can surpass the longitudinal tunneling conductance.
  • Adjusting the in-plane magnetization direction can invert the signs of both longitudinal and transverse differential conductance, transforming the behavior of the junction from a simple spin valve into an amplifier without altering the topological surface state.

Article Abstract

We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

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Source
http://dx.doi.org/10.1103/PhysRevLett.117.166806DOI Listing

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