A 100-nm wide, vertically formed graphene stripe (GS) is demonstrated for three-dimensional (3D) electronic applications. The GS forms along the sidewall of a thin nickel film. It is possible to further scale down the GS width by engineering the deposited thickness of the atomic layer deposition (ALD) Ni film. Unlike a conventional GS or graphene nanoribbon (GNR), the vertically formed GS is made without a graphene transfer and etching process. The process integration of the proposed GS FETs resembles that of currently commercialized vertical NAND flash memory with a design rule of less than 20 nm, implying practical usage of this formed GS for 3D advanced FET applications.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/smll.201602373 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Dentoskeletal effects of aesthetic and conventional twin block appliances in the treatment of skeletal class II malocclusion: a randomized controlled trial.
Sci Rep
January 2025
Department of Orthodontics, Faculty of Dentistry, University of Damascus, Damascus, Syria.
Twin block appliances are commonly used to treat skeletal class II malocclusion. However, many adverse effects, such as lower incisor protrusion and a bulky nature, can be observed. To overcome these effects, a modified twin block was designed, which uses vacuum-formed hard plates (VFPs) instead of acrylic plates.
View Article and Find Full Text PDFExploring policy coherence for land use transformations: The case of Scotland.
J Environ Manage
January 2025
Scotland's Rural College (SRUC), Peter Wilson Building, Kings Buildings, Edinburgh, EH9 3JG, UK. Electronic address:
The multiple crises (climate, biodiversity, austerity) facing our socio-ecological systems require ambitious responses; with much of the responsibility for protecting public goods and developing sustainably lying with public policy. To tackle these wicked problems, there are increasing calls for policy coherence: to use the levers of government in a more holistic and systemic manner. Land use transformation is crucial to achieving these ambitions.
View Article and Find Full Text PDFNumerical Study on the Shear Behavior of a Late-Model Cold-Formed Stainless Steel C-Shaped Beam.
Materials (Basel)
December 2024
Faculty of Civil Engineering and Mechanics, Kunming University of Science and Technology, Kunming 650500, China.
The failure mode of thin-walled C-channel beams typically manifests as premature local buckling of the compression flange, leading to insufficient utilization of material strength in both the flange and the web. To address this issue, this study adopts the approach of increasing the number of bends to reinforce the flange and adding V-shaped stiffeners in the middle of the web to reduce the width-to-thickness ratio of the plate elements, thereby delaying local buckling and allowing for greater plastic deformation. However, the challenge lies in the irregular cross-sectional shape and complex buckling patterns.
View Article and Find Full Text PDFInfluence of Periodically Varying Slit Widths on Sound Absorption by a Slit Pore Medium.
Materials (Basel)
December 2024
School of Engineering and Innovation, The Open University, Milton Keynes MK7 6AA, UK.
A simple pore microstructure of parallel, identical, and inclined smooth-walled slits in a rigid solid, for which prediction of its geometrical and acoustic properties is straightforward, can yield useful sound absorption. This microstructure should be relatively amenable to 3D printing. Discrepancies between measurements and predictions of normal incidence sound absorption spectra of 3D printed vertical and slanted slit pore samples have been attributed to the rough surfaces of the slit walls and uneven slit cross-sections perpendicular to the printing direction.
View Article and Find Full Text PDFSpatial control of doping in conducting polymers enables complementary, conformable, implantable internal ion-gated organic electrochemical transistors.
Nat Commun
January 2025
Department of Electrical Engineering, University of California, Irvine, CA, USA.
Complementary transistors are critical for circuits with compatible input/output signal dynamic range and polarity. Organic electronics offer biocompatibility and conformability; however, generation of complementary organic transistors requires introduction of separate materials with inadequate stability and potential for tissue toxicity, limiting their use in biomedical applications. Here, we discovered that introduction of source/drain contact asymmetry enables spatial control of de/doping and creation of single-material complementary organic transistors from a variety of conducting polymers of both carrier types.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!