Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films.

Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L Ga(μ-S)] (1) and [L Ga(μ-S)] (2) containing either N,C,N- or C,N-chelating ligands L or L (L is {2,6-(Me NCH ) C H } and L is {2-(Et NCH )-4,6-tBu -C H } ). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L Ga(κ -S ) (3) was prepared and the unprecedented complex [{2-[CH{(CH ) CH }(μ-OH)]-6-CH NMe }C H ]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.