The rectifying and negative differential resistance effects in graphene/h-BN nanoribbon heterojunctions.

We investigate the electronic transport properties of four types of lateral graphene/h-BN nanoribbon heterojunctions using the non-equilibrium Green's function method in combination with the density functional theory. The results show that the heterojunction displays an interesting rectifying effect when the interface has a left-right type structure, while a pronounced negative differential resistance (NDR) effect when the interface has an up-down type structure. Moreover, when the interface of the heterojunction has a left-bank or right-bank type structure, it presents the rectifying (with a larger rectification ratio) and NDR effects. This work is helpful to further construct and prepare a nanodevice based on the graphene/h-BN heterojunction materials according to the proposed structures.