The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device's electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET's output current (174.2 mA mm) is much higher than that of the planar-type device (45.2 mA mm), and the on/off ratio and subthreshold swing are more than 10 and as low as 110 mV dec, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5052526 | PMC |
| http://dx.doi.org/10.1038/srep34757 | DOI Listing |
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