Bipolar resistive switching in YMnO/Nb:SrTiO pn-heterojunctions.

Nanotechnology

Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, Germany. Material Systems for Nanoelectronics, Chemnitz University of Technology, D-09107 Chemnitz, Germany.

Published: November 2016

Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive switching (BRS) in YMnO/Nb:SrTiO pn-heterojunctions. A thermally driven electroforming process is required prior to the observed BRS. Results indicate that the BRS in YMnO/Nb:SrTiO originates from the combined effects of charge trapping and detrapping processes along with the electro-migration of charged point defects in the depletion layer of the pn-heterojunction. It is shown that the built-in voltage of the pn-heterojunctions can be tuned by the oxygen partial pressure during growth of the YMnO thin film and impacts the working parameters of the resistively switching cell. This study provides a guideline for material engineering of bipolar resistive switches based on pn-heterojunctions.

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http://dx.doi.org/10.1088/0957-4484/27/45/455201DOI Listing

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