Monolayer MoS can effectively screen the vdW interaction of underlying substrates with external systems by >90% because of the substantial increase in the separation between the substrate and external systems due to the presence of the monolayer. This substantial screening of vdW interactions by MoS monolayer is different from what reported at graphene.
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http://dx.doi.org/10.1002/adma.201601581 | DOI Listing |
Phys Chem Chem Phys
January 2025
Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China.
Monolayer MoS, a compound in two-dimensional TMDs, exhibits excellent physical and chemical properties due to its sandwich structure, making it widely used in the design of nanodevices. We investigated the impact of GaN substrates on the thermal and electronic properties of monolayer MoS. The results reveal that the polarity of the GaN substrate significantly affects the thermal conductivity of monolayer MoS.
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December 2024
Electrical Engineering, Indian Institute of Technology Gandhinagar, Gandhinagar 382055, India.
This work presents a density functional theory (DFT) study of substitutional and adsorption-based halogen (I or F) doping of WS-based transistors to enhance their contact properties. Substitutional doping of the WS monolayer with halogens results in -type behavior, while halogen adsorption on the surface of the WS monolayer induces -type behavior. This is attributed to differing directions of charge flow, as supported by the Mulliken analysis.
View Article and Find Full Text PDFNat Commun
December 2024
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS.
View Article and Find Full Text PDFNat Commun
December 2024
Department of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice University, Houston, TX, 77005, USA.
As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc.
View Article and Find Full Text PDFNat Commun
December 2024
Engineering Science and Mechanics, Penn State University, University Park, PA, USA.
Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly, we report incipient ferroelectricity in freestanding SrTiO nanomembranes integrated with monolayer MoS to create multifunctional devices, demonstrating stable ferroelectric order at low temperatures for cryogenic memory devices. Our observation includes ultra-fast polarization switching (~10 ns), low switching voltage (<6 V), over 10 years of nonvolatile retention, 100,000 endurance cycles, and 32 conductance states (5-bit memory) in SrTiO-gated MoS transistors at 15 K and up to 100 K.
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