In few-layer transition metal dichalcogenides (TMDCs), the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by threefold rotational symmetry and time reversal symmetry. In even layers, the extra inversion symmetry requires all states to be Kramers degenerate; whereas in odd layers, the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. Here we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons in few-layer TMDCs. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices, which provide a crucial information for understanding the unique properties of multi-valley band structures of few-layer TMDCs.
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http://dx.doi.org/10.1038/ncomms12955 | DOI Listing |
ACS Nano
April 2021
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
Rich valleytronics and diverse defect-induced or interlayer pre-bandgap excitonics have been extensively studied in transition metal dichalcogenides (TMDCs), a system with fascinating optical physics. However, more intense high-energy absorption peaks (∼3 eV) above the bandgaps used to be long ignored and their underlying physical origin remains to be unveiled. Here, we employ momentum resolved electron energy loss spectroscopy to measure the dispersive behaviors of the valley excitons and intense higher-energy peaks at finite momenta.
View Article and Find Full Text PDFNanoscale
May 2020
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, People's Republic of China. and State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
Since the emergence of transition metal dichalcogenide (TMDC) based van der Waals (vdW) structures, interlayer charge transport has become an important issue towards the application of these novel materials. Due to the unique layered structure of these materials, charge transport across the vdW gaps via tunneling is governed by individual valleys with different interlayer coupling strengths. On the other hand, the omnipresent point defects in TMDCs could possibly cause intervalley scattering between these valleys.
View Article and Find Full Text PDFNano Lett
May 2020
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
A comprehensive understanding of the ultrafast electron dynamics in two-dimensional transition metal dichalcogenides (TMDs) is necessary for their applications in optoelectronic devices. In this work, we contribute a study of ultrafast electron cooling and decay dynamics in the supported and suspended monolayer WS by time- and energy-resolved photoemission electron microscopy (PEEM). Electron cooling in the Q valley of the conduction band is clearly resolved in energy and time, on a time scale of 0.
View Article and Find Full Text PDFNano Lett
December 2019
DQMP , University of Geneva, 24 Quai Ernest-Ansermet , CH-1211 Geneva , Switzerland.
Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers are accumulated in these systems are not understood. We address these issues by means of a systematic experimental study of transport in monolayer MoSe and WSe as a function of magnetic field and gate voltage, exploring accumulated densities of carriers ranging from approximately 10 cm holes in the valence band to 4 × 10 cm electrons in the conduction band. We identify the conditions when the chemical potential enters different valleys in the monolayer band structure (the K and Q valley in the conduction band and the two spin-split K-valleys in the valence band) and find that an independent electron picture describes the occupation of states well.
View Article and Find Full Text PDFJ Phys Chem Lett
October 2018
Department of Physics and Astronomy , The University of Kansas, Lawrence , Kansas 66045 , United States.
Forming van der Waals multilayer structures with two-dimensional materials is a promising new method for material discovery. The weak van der Waals interlayer interaction without atomic correspondence relaxes lattice matching requirement and allows formation of high-quality interfaces with virtually any combination of two-dimensional materials. However, the weak nature of the van der Waals interaction also makes it challenging to harness emergent properties of such multilayer materials.
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