One-dimensional electronic fluids are peculiar conducting systems, where the fundamental role of interactions leads to exotic, emergent phenomena, such as spin-charge (spinon-holon) separation. The distinct low-energy properties of these 1D metals are successfully described within the theory of linear Luttinger liquids, but the challenging task of describing their high-energy nonlinear properties has long remained elusive. Recently, novel theoretical approaches accounting for nonlinearity have been developed, yet the rich phenomenology that they predict remains barely explored experimentally. Here, we probe the nonlinear spectral characteristics of short GaAs quantum wires by tunnelling spectroscopy, using an advanced device consisting of 6000 wires. We find evidence for the existence of an inverted (spinon) shadow band in the main region of the particle sector, one of the central predictions of the new nonlinear theories. A (holon) band with reduced effective mass is clearly visible in the particle sector at high energies.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5027612 | PMC |
| http://dx.doi.org/10.1038/ncomms12784 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
High-order direct modulation terahertz communications with a wideband time-coding metachip modulator.
Sci Adv
November 2024
Zhangjiang Laboratory, Shanghai, China.
Article Synopsis
- Terahertz communication technology using on-off keying (OOK) is crucial for sixth-generation systems, particularly for short-distance and high-speed data transmission.
- Low-order OOK has limitations in interference resistance and demodulation, prompting the development of a high-order direct modulation framework with a wideband time-coding metachip modulator.
- This system utilizes gallium arsenide Schottky diodes to precisely control terahertz harmonics, enabling advanced modulation schemes like quadrature phase-shift keying and 16-quadrature amplitude modulation for effective real-time image transmission.
Intraband transitions at a CsPbBr/GaAs heterointerface in a two-step photon upconversion solar cell.
Sci Rep
November 2024
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe, 657-8501, Japan.
Two-step photon upconversion solar cells (TPU-SCs) based on III-V semiconductors can achieve enhanced sub-bandgap photon absorption because of intraband transitions at the heterointerface. From a technological aspect, the question arose whether similar intraband transitions can be realized by using perovskite/III-V semiconductor heterointerfaces. In this article, we demonstrate a TPU-SC based on a CsPbBr/GaAs heterointerface.
View Article and Find Full Text PDFLSTM-based framework for predicting point defect percentage in semiconductor materials using simulated XRD patterns.
Sci Rep
October 2024
Faculty of Electrical and Computer Engineering, Babol Noshirvani University of Technology, Babol 47148-71167, Iran.
In this paper, we present a machine learning-based approach that leverages Long Short-Term Memory (LSTM) networks combined with a sliding window technique for feature extraction, aimed at accurately predicting point defect percentages in semiconductor materials based on simulated X-ray Diffraction (XRD) data. The model was initially trained on silicon-simulated XRD data with defect percentages ranging from 1 to 5%, enabling it to predict defect percentages from 0 to 10% in silicon and other semiconductor materials, including AlAs, CdS, GaAs, Ge, and ZnS. Through extensive experimentation, we explored different sequence lengths and LSTM units, identifying the optimal configuration as a sequence length of 3501 and 4500 units, which yielded the best results.
View Article and Find Full Text PDFSensitive SWIR Organic Photodetectors with Spectral Response Reaching 1.5 µm.
Adv Mater
October 2024
State Key Laboratory of Luminescent Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China.
The performance of organic photodetectors (OPDs) sensitive to the short-wavelength infrared (SWIR) light lags behind commercial indium gallium arsenide (InGaAs) photodetectors primarily due to the scarcity of organic semiconductors with efficient photoelectric responses exceeding 1.3 µm. Limited by the Energy-gap law, ultralow-bandgap organic semiconductors usually suffer from severe non-radiative transitions, resulting in low external quantum efficiency (EQE).
View Article and Find Full Text PDFWe have newly developed, to the best of our knowledge, a detection method for broadband infrared pulses based on sum-frequency generation spectroscopy in reflection geometry, which can avoid a restriction of the detection bandwidth originating from the phase mismatch that is inevitable for the upconversion in transmission geometry. Using a GaAs crystal, we successfully demonstrated the ultra-broadband detection of the infrared pulses generated from a two-color laser-induced air plasma filament in a region from 300 to 3300 cm. With the advantage of ultra-short infrared pulses, the present detection method holds promise for application to time-resolved, ultra-broadband vibrational spectroscopy.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!