Slowdown of the Electronic Relaxation Close to the Mott Transition.

Phys Rev Lett

Max Planck Institute for the Structure and Dynamics of Matter, 22761 Hamburg, Germany and University of Hamburg-CFEL, 22761 Hamburg, Germany.

Published: August 2016

We investigate the time-dependent reformation of the quasiparticle peak in a correlated metal near the Mott transition, after the system is quenched into a hot electron state and equilibrates with an environment which is colder than the Fermi-liquid crossover temperature. Close to the transition, we identify a purely electronic bottleneck time scale, which depends on the spectral weight around the Fermi energy in the bad metallic phase in a nonlinear way. This time scale can be orders of magnitude larger than the bare and renormalized electronic hopping time, so that a separation of electronic and lattice time scales may break down. The results are obtained using nonequilibrium dynamical mean-field theory and a slave-rotor representation of the Anderson impurity model.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevLett.117.096403DOI Listing

Publication Analysis

Top Keywords

mott transition
8
time scale
8
slowdown electronic
4
electronic relaxation
4
relaxation close
4
close mott
4
transition investigate
4
investigate time-dependent
4
time-dependent reformation
4
reformation quasiparticle
4

Similar Publications

2D metallic transition metal dichalcogenides: promising contact metals for 2D GaN-based (opto)electronic devices.

Phys Chem Chem Phys

January 2025

Jiangxi Provincial Key Laboratory of Advanced Electronic Materials and Devices, Jiangxi Science & Technology Normal University, Nanchang 330018, China.

Owing to their high light absorption coefficient, excellent electronic mobility, and enhanced excitonic effect, two-dimensional (2D) GaN materials hold great potential for applications in optoelectronic and electronic devices. As the metal-semiconductor junction (MSJ) is a fundamental component of semiconductor-based devices, identifying a suitable metal for contacting semiconductors is essential. In this work, detailed first-principles calculations were performed to investigate the contact behavior between the GaN monolayer (ML) and a series of 2D metals MX (M = Nb, Ta, V, Mo, or W; X = S or Se).

View Article and Find Full Text PDF

The First Molecular Ferroelectric Mott Insulator.

Adv Mater

January 2025

Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China.

With the discovery of colossal magnetoresistance materials and high-temperature superconductors, Mott insulators can potentially undergo a transition from insulating state to metallic state. Here, in molecular ferroelectrics system, a Mott insulator of (CHN)VO has been first synthesized, which is a 2D organic-inorganic ferroelectric with composition of layered vanadium oxide and quinuclidine ring. Interestingly, accompanied by the ferroelectric phase transition, (CHN)VO changes sharply in conductivity.

View Article and Find Full Text PDF

X-ray Nanoimaging of a Heterogeneous Structural Phase Transition in VO.

Nano Lett

January 2025

Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.

Controlling the Mott transition through strain engineering is crucial for advancing the development of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries and extrinsic defects, posing significant challenges to fully understanding the impact of microscopic distortions on the local Mott transition. Here, using a synchrotron-based scanning X-ray nanoprobe, we studied the real-space structural heterogeneity during the structural phase transition in a VO thin film.

View Article and Find Full Text PDF

Photoinduced Fröhlich Interaction-Driven Distinct Electron- and Hole-Polaron Behaviors in Hybrid Organic-Inorganic Perovskites by Ultrafast Terahertz Probes.

ACS Nano

January 2025

School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE), Fudan University, Shanghai 200433, China.

The formation of large polarons resulting from the Fröhlich coupling of photogenerated carriers with the polarized crystal lattice is considered crucial in shaping the outstanding optoelectronic properties in hybrid organic-inorganic perovskite crystals. Until now, the initial polaron dynamics after photoexcitation have remained elusive in the hybrid perovskite system. Here, based on the terahertz time-domain spectroscopy and optical-pump terahertz probe, we access the nature of interplay between photoexcited unbound charge carriers and optical phonons in MAPbBr within the initial 5 ps after excitation and have demonstrated the simultaneous existence of both electron- and hole-polarons, together with the photogenerated carrier dynamic process.

View Article and Find Full Text PDF

Purpose Of Review: Women are underrepresented in HIV infection and prevention research despite making up half of people living with HIV. The female genital tract (FGT) serves as a primary site of HIV acquisition, but gaps in knowledge remain regarding protective innate immune mechanisms. Innate lymphoid cells are tissue-resident cells involved in mucosal barrier maintenance and protection, and innate lymphoid cells (ILCs) are altered during chronic HIV infection.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!