We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849 cd/m, a current efficiency of 4.2 cd/A, and an external quantum efficiency of 2.5%.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OL.41.003984 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Full Color Al-Doped InP Quantum Dots with High Brightness via Gram-Scale One-Pot Synthesis for White Light-Emitting Diodes.
ACS Appl Mater Interfaces
January 2025
College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
High-performance, environmentally friendly indium phosphide (InP)-based quantum dots (QDs) are urgently needed to meet the demands of rapidly evolving display and lighting technologies. By adopting the highly efficient and cost-effective one-pot method and utilizing aluminum isopropoxide (AIP) as the Al source, a series of Al-doped InP/(Al)ZnS QDs with emission maxima ranging from 480 to 627 nm were synthesized. The photoluminescence quantum yield (PLQY) of the blue, green, yellow, orange, and red QDs, with emission peaks at 480, 509, 560, 600, and 627 nm, reached 34%, 62%, 86%, 96%, and 85%, respectively.
View Article and Find Full Text PDFDirect Evidence of Excessive Charge-Carrier-Induced Degradation in InP Quantum-Dot Light-Emitting Diodes.
ACS Appl Mater Interfaces
January 2025
Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.
The limited operational lifetime of quantum-dot light-emitting diodes (QLEDs) poses a critical obstacle that must be addressed before their practical application. Specifically, cadmium-free InP-based QLEDs, which are environmentally benign, experience significant operational degradation due to challenges in charge-carrier confinement stemming from the composition of InP quantum dots (QDs). This study investigates the operational degradation of InP QLEDs and provides direct evidence of the degradation process.
View Article and Find Full Text PDFHigh-Performance InP Quantum-Dot Light-Emitting Diodes with a NiO Nanoparticle-Embedded Hybrid Emissive Layer.
ACS Appl Mater Interfaces
January 2025
Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and SOFT Foundry Institute, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea.
Quantum-dot (QD) light-emitting diodes (QLEDs) are garnering significant attention owing to their superb optoelectrical properties, but the overinjection of electrons compared to holes into the emissive layer (EML) is still a critical obstacle to be resolved. Current approaches, such as inserting a charge-balancing interlayer and mixing p-type organic additives into the EML, face issues of process complexity and poor miscibility. In this work, we demonstrate efficient InP QLEDs by simply embedding NiO nanoparticles (NPs) into the EML which forms a homogeneous QD-metal oxide hybrid EML.
View Article and Find Full Text PDFUncommon Magnetic Ordering in the Quantum Magnet Yb_{3}Ga_{5}O_{12}.
Phys Rev Lett
December 2024
Université Grenoble Alpes, Grenoble INP, CEA, IRIG, PHELIQS, 38000 Grenoble, France.
The antiferromagnetic structure of Yb_{3}Ga_{5}O_{12} is identified by neutron diffraction experiments below the previously known transition at T_{λ}=54 mK. The magnetic propagation vector is found to be k=(1/2,1/2,0), an unusual wave vector in the garnet structure. The associated complex magnetic structure highlights the role of exchange interactions in a nearly isotropic system dominated by dipolar interactions and finds echoes with exotic structures theoretically proposed.
View Article and Find Full Text PDFOrigin of the Suppression of Magnetic Order in MnSi under Hydrostatic Pressure.
Phys Rev Lett
December 2024
Université Grenoble Alpes, CEA, Grenoble INP, IRIG-PHELIQS, F-38000 Grenoble, France.
We experimentally study the evolution of the magnetic moment m and exchange interaction J as a function of hydrostatic pressure in the zero-field helimagnetic phase of the strongly correlated electron system MnSi. The suppression of magnetic order at ≈1.5 GPa is shown to arise from the J collapse and not from a quantum fluctuations induced reduction of m.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!