The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
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| http://dx.doi.org/10.1002/smll.201601310 | DOI Listing |
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