The effects of triphenylphosphine (PPh3 ) and (3-amino-propyl)triethoxysilane (APTES) on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by J.-H. Park and co-workers on page 6711 in comparison with a conventional MoS2 device. A very high performance ReSe2 photodetector is demonstrated, which has a broad photodetection range, high photoresponsivity (1.18 × 10(6) A W(-1) ), and fast photoswitching speed (rising/decaying time: 58/263 ms).
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http://dx.doi.org/10.1002/adma.201670212 | DOI Listing |
Nanoscale
September 2024
CNR-SPIN Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
The field emission properties of rhenium diselenide (ReSe) nanosheets on Si/SiO substrates, obtained through mechanical exfoliation, have been investigated. The n-type conduction was confirmed by using nano-manipulated tungsten probes inside a scanning electrode microscope to directly contact the ReSe flake in back-gated field effect transistor configuration, avoiding any lithographic process. By performing a finite element electrostatic simulation of the electric field, it is demonstrated that the use of a tungsten probe as anode, at a controlled distance from the ReSe emitter surface, allows the collection of emitted electrons from a reduced area that furtherly decreases by reducing the tip-sample distance, allowing a local characterization of the field emission properties.
View Article and Find Full Text PDFNat Commun
March 2024
National Graphene Institute (NGI), University of Manchester, Manchester, M13 9PL, UK.
Nature is abundant in material platforms with anisotropic permittivities arising from symmetry reduction that feature a variety of extraordinary optical effects. Principal optical axes are essential characteristics for these effects that define light-matter interaction. Their orientation - an orthogonal Cartesian basis that diagonalizes the permittivity tensor, is often assumed stationary.
View Article and Find Full Text PDFNanoscale
February 2024
Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Israel.
Two-dimensional rhenium disulfide (ReS) and rhenium diselenide (ReSe) have gained popularity due to their outstanding optoelectronic properties. However, their mechanical behavior has not been investigated experimentally and many of their mechanical parameters are still unexplored. Here we conducted atomic force microscopy (AFM) indentation experiments and extracted their Young's moduli and found that it is thickness-independent.
View Article and Find Full Text PDFRhenium diselenide (ReSe) has shown great application potential in the field of optical devices because of its excellent optoelectronic properties. In this study, we systematically investigated the nonlinear optical absorption properties of mono- and bi-layer ReSe and the ultrafast carrier dynamics process in the ultraviolet to near-infrared spectral range as the essential foundational groundwork for harnessing the potential of ultrathin ReSe-based optoelectronic devices. We found that ReSe has excellent nonlinear absorption performance and a low saturation absorption intensity that is better than that of many semiconductor materials.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2023
Department of Physics "E.R. Caianiello", University of Salerno, Fisciano 84084, Salerno, Italy.
The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. In this paper, we perform the electrical characterization of few-layer ReS-based FETs with Cr-Au contacts over a wide temperature range. We exploit the temperature-dependent transfer and output characteristics to estimate the effective Schottky barrier at the Cr-Au/ReS interface and to investigate the temperature behavior of parameters, such as the threshold voltage, carrier concentration, mobility, and subthreshold swing.
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