AI Article Synopsis
- The study examines laser damage mechanisms in two conductive wide-bandgap semiconductor films: indium tin oxide (ITO) and silicon doped GaN (Si:GaN).
- The experiments utilized various analytical techniques and revealed that ITO experienced thermal degradation while Si:GaN showed localized eruptions at interfaces when exposed to nanosecond laser pulses.
- The findings suggest that damage in ITO is linked to free carrier absorption, whereas carbon complexes may play a role in the damage process of Si:GaN.
Article Abstract
Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.
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| http://dx.doi.org/10.1364/OE.24.017616 | DOI Listing |
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