AI Article Synopsis
- The study focuses on tensile-strained Ge/SiGe quantum-well photodetectors built on silicon substrates, which show enhanced optical characteristics.
- A tensile strain of 0.21% is applied to the Ge wells, resulting in improved response at wavelengths of 1.5 μm or longer due to a direct bandgap reduction.
- The research highlights the potential to optimize strain and Ge well width to design photodetectors suitable for telecommunication applications, particularly in the C-band and beyond, for optical communication needs.
Article Abstract
We report on tensile-strained Ge/SiGe quantum-well (QW) metal-semiconductor-metal (MSM) photodetectors on Si substrates. A tensile strain of 0.21% is introduced into the Ge wells by growing the QW stack on in-situ annealed Ge-on-Si virtual substrates (VS). The optical characterization of Ge/SiGe QW MSM photodetectors indicates that the optical response increases to a wavelength of 1.5 μm or higher owing to the strain-induced direct bandgap shrinkage. Analysis of the band structure by using a k · p model suggests that by optimizing the tensile strain and Ge well width, tensile-strained Ge/SiGe QW photodetectors can be designed to cover the telecommunication C-band and beyond for optical telecommunications and on-chip interconnection.
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| http://dx.doi.org/10.1364/OE.24.017562 | DOI Listing |
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A 2.7% tensile strained Ge/SiGe heterostructure nanowire (NW) is in-situ fabricated by a three-dimensional Ge condensation method. The NW metal-semiconductor-metal (MSM) photodetector demonstrates an ultra-broadband detection wavelength of 400-2400 nm, showing a high responsivity of >3.
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View Article and Find Full Text PDFArticle Synopsis
- The study focuses on tensile-strained Ge/SiGe quantum-well photodetectors built on silicon substrates, which show enhanced optical characteristics.
- A tensile strain of 0.21% is applied to the Ge wells, resulting in improved response at wavelengths of 1.5 μm or longer due to a direct bandgap reduction.
- The research highlights the potential to optimize strain and Ge well width to design photodetectors suitable for telecommunication applications, particularly in the C-band and beyond, for optical communication needs.
Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.
Nanotechnology
March 2010
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian, People's Republic of China.
We directly demonstrate quantum-confined direct band transitions in the tensile strained Ge/SiGe multiple quantum wells grown on silicon substrates by room temperature photoluminescence. The tensile strained Ge/SiGe multiple quantum wells with various thicknesses of Ge well layers are grown on silicon substrates with a low temperature Ge buffer layer by ultrahigh vacuum chemical vapor deposition. The strain status, crystallographic, and surface morphology are systematically characterized by high-resolution transmission electron microscopy, atomic force microscopy, x-ray diffraction, and Raman spectroscopy.
View Article and Find Full Text PDFTight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells.
Nanotechnology
February 2010
NEST-CNR-INFM and Scuola Normale Superiore, Piazza dei Cavalieri 7, I-56127 Pisa, Italy.
It is known that under a tensile strain of about 2% of the lattice constant, the energy of the bottom conduction state of bulk Ge at the Gamma point falls below the minimum at the L point, leading to a direct gap material. In this paper we investigate how the same condition is realized in tensile strained Ge quantum wells. By means of a tight-binding sp(3)d(5)s(*) model, we study tensile strained Ge/Si(0.
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