For the extreme ultraviolet (EUV) lithography, multilayer (ML) defects such as bump and pit defects can disrupt the phase of reflected field and degrade aerial images on wafer. In this paper, a defect printability and repair simulator (DPRS) is introduced to predict and repair the effect of ML defects in EUV aerial images. DPRS is composed of multilayer growth by using Gaussian function and Stearns's method, mask simulation by using a scattering matrix (S-matrix) analysis method, and projection simulation by using Köhler's illumination. For bump and pit ML defects, the combining the modified absorber and the layer-by-layer ML peeling is better than other methods. This study can be helpful in understanding EUV defect and also give insight into the EUV defect compensation for the device volume production.
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| http://dx.doi.org/10.1166/jnn.2016.12254 | DOI Listing |
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