Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high ION/IOFF ratio of ∼10(5). The device also showed stable retention time over 5 × 10(5) s, outstanding cell-to-cell uniformity, and bending endurance over 10(3) cycles when measured in both the flat and the maximum bending conditions.
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