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Author Correction: Frustration- and doping-induced magnetism in a Fermi-Hubbard simulator.
Nature
February 2024
Department of Physics, Harvard University, Cambridge, MA, USA.
Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe.
J Phys Condens Matter
March 2022
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China.
As a narrow-gap semiconductor, III-VI two-dimensional (2D) van der Waals layered indium selenide (InSe) has attracted a lot of attention due to excellent physical properties. For potential optoelectronic applications, the tunability of the optical property is challenging, e.g.
View Article and Find Full Text PDFMultiphoton light emission in barium stannate perovskites driven by oxygen vacancies, Eu and La: accessing the role of defects and local structures.
Phys Chem Chem Phys
August 2021
Radiochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085, India.
Defect engineering in perovskites has been found to be the most efficient approach to manipulate their performance in ultraviolet-to-visible photon conversion. Under UV irradiation, BaSnO exhibited multicolor photoluminescence (MCPL) in the bluish white region. Its origin has not been well studied in the literature and has been probed in this work using synchrotron radiation, positron annihilation and density functional theory.
View Article and Find Full Text PDFMobility Extraction in 2D Transition Metal Dichalcogenide Devices-Avoiding Contact Resistance Implicated Overestimation.
Small
July 2021
Birck Nanotechnology Center, Department of Electrical and Computer Engineering, Purdue University, 1205 W State St, West Lafayette, IN, 47907, USA.
Schottky barrier (SB) transistors operate distinctly different from conventional metal-oxide semiconductor field-effect transistors, in a unique way that the gate impacts the carrier injection from the metal source/drain contacts into the channel region. While it has been long recognized that this can have severe implications for device characteristics in the subthreshold region, impacts of contact gating of SB in the on-state of the devices, which affects evaluation of intrinsic channel properties, have been yet comprehensively studied. Due to the fact that contact resistance (R ) is always gate-dependent in a typical back-gated device structure, the traditional approach of deriving field-effect mobility from the maximum transconductance (g ) is in principle not correct and can even overestimate the mobility.
View Article and Find Full Text PDFThe atomic origin of nickel-doping-induced catalytic enhancement in MoS for electrochemical hydrogen production.
Nanoscale
April 2019
School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China.
Transition metal (TM) doping has been demonstrated to be an efficacious way to boost the catalytic activity of molybdenum disulfide (MoS2) for energy storage and conversion, especially for the hydrogen evolution reaction (HER). Real-space visualization of the atomic structure of Ni doped MoS2 is crucial to understand the role of heteroatoms in enhancing electrocatalysis. By utilizing aberration corrected scanning transmission electron microscopy (STEM), we found that Ni dopants occupy Mo sites in MoS2 synthesized by a one-pot hydrothermal method.
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