Manganese-doped nickel oxide (Ni1-xMnxO) nanoparticulate samples with x in the range 0 (undoped sample) to 0.35 were synthesized by sol-gel method involving chemical reactions between the solutions of nickel nitrate hexahydrate and manganese acetate tetrahydrate. The nanocrystallites obtained after annealing of the precipitates for different durations were characterized by X-ray diffraction and high resolution transmission electron microscopy. The samples showed high degree of purity with no secondary phase up to 35 at.% (x = 0.35) of Mn-doping. At the initial doping concentrations, the crystallite sizes increased due to vacancy type defects being recombined with some of the doped Mn2+ ions. However, substitution-induced strain soon overtook the crystallite dynamics and the sizes rapidly started reducing again as an indirect consequence of the necessity to accommodate majority of the doped cations on the surfaces of the nanocrystallites. There was conspicuous changes in the lattice parameter too which could again be attributed to the strain and charge effects. The average sizes of the crystallites were obtained in the range 5.5 nm to 13.1 nm for the different samples. UV-Vis absorption studies indicated the formation of excitonic states in NiO on Mn-doping. The band gap energy (Eg) derived from the optical absorption spectra showed a continuous increase with increase of Mn-doping of the samples. Positron lifetime and Doppler broadening spectroscopic studies were carried out on those samples to characterize the vacancy type defects and defect clusters/complexes. There were also indications to suggest positron annihilation at the crystallite surfaces owing to their sizes of nanometer order. Positron lifetimes decreased upon increase of Mn-doping. The coincidence Doppler broadened ratio curves indicated definite shifts of the prominent oxygen-electron-annihilation peak and the variation of the lineshape parameter S also indicated clearly the effects of Mn-doping.
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http://dx.doi.org/10.1166/jnn.2016.10963 | DOI Listing |
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