CsBi4Te6 is one of the best performing low-temperature thermoelectric (TE) materials. However, it has not received worldwide intensive investigation due to the limitation of synthetic methods. Here we report a new facile approach by not using the reactive Cs metal and the mid-temperature TE properties have been studied for the first time.
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http://dx.doi.org/10.1039/c6dt02109c | DOI Listing |
Dalton Trans
July 2016
Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China.
CsBi4Te6 is one of the best performing low-temperature thermoelectric (TE) materials. However, it has not received worldwide intensive investigation due to the limitation of synthetic methods. Here we report a new facile approach by not using the reactive Cs metal and the mid-temperature TE properties have been studied for the first time.
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